PART |
Description |
Maker |
ZVNL120G |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET SOT223 N-CHANNEL ENHANCEMENT MODE
|
Zetex Semiconductors Diodes Incorporated
|
ARF448B ARF448A ARF448 |
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 250W 65MHz
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
STP9NB50FP STP9NB50 5368 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的) From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
STMicroelectronics N.V. 意法半导
|
STB9NB50 5376 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET N - CHANNEL ENHANCEMENT MODE Power MESH] MOSFET From old datasheet system
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
STB7NB40 5362 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET From old datasheet system
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V,夹断电0.18A的P沟道增强型MOSFET晶体 From old datasheet system P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
APM9988COC-TUL APM9988COC-TRL |
Dual N-Channel Enhancement Mode MOSFET 双N沟道增强型MOS Dual N-Channel Enhancement Mode MOSFET 6 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-153AA
|
Anpec Electronics, Corp.
|
IXTA60N10T IXTP60N10T |
N-Channel Enhancement Mode Avalanche Rated 60 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
MTD3055VL MTD3055VLNL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 From old datasheet system M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
ZVP4525Z ZVP4525ZTA ZVP4525ZTC |
250 V, P-channel enhancement mode MOSFET 250V P-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX[Zetex Semiconductors]
|